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| i nchange semiconductor isc product specification isc website isc & iscsemi is registered trademark 1 isc silicon pn p power transistor 2 s b719 description high collector - emitter breakdown voltage - : v ( br ) ceo = - 16 0v( min ) wide area of safe operati on complement to t ype 2 s d759 applic ations designed for power amplifier and tv vertical deflection o utput applications. a bsolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector - b ase v oltage - 16 0 v v ceo collector - e mitter v oltage - 16 0 v v ebo emitter - b ase v oltage - 5 .0 v i c collector c urrent - continuous - 2 a i c m collector c urrent - pea k - 3 a p c total p ower d issipat i on @ t c =25 25 w t j junction temperature 150 t stg storage temperature range - 5 5~ 150
i nchange semiconductor isc product specification isc website isc & iscsemi is registered trademark 2 isc silicon pnp power transistor 2 sb719 electrical characteristics t c =25 v ( br )ceo collector - e mitter breakdown v oltage i c = - 5 m a; i b = 0 - 160 v v ( br )cbo collector - b ase breakdown v oltage i c = - 0.1m a; i e = 0 - 160 v v ( br )ebo emitter - b ase breakdown v oltage i e = - 0.1m a; i c = 0 - 5 v v c e( sat ) collector - e mitter s aturation v oltage i c = - 5 00m a; i b = - 50m a - 1.0 v v be( sat ) base - e mitter s aturation v oltage i c = - 5 00m a; i b = - 50m a - 1.5 v i c bo collector c utoff c urrent v c b = - 1 5 0 v ; i e = 0 - 1 0 a i ebo emitter c utoff c urrent v eb = - 3.0 v; i c =0 - 1 0 a h fe dc c urrent g ain i c = - 150m a; v ce = - 5 v 35 2 0 0 f t current - gain bandwidth product i c = - 100m a; v ce = - 10 v 10 0 mhz ? h fe classifications a b c 35 - 70 60 - 120 100 - 200 |
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